Linear TM Power MOSFET
w/ Extended FBSOA
IXTK22N100L
IXTX22N100L
V DSS
I D25
R DS(on)
= 1000V
= 22A
≤ 600m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXTK)
Symbol
V DSS
V DGR
V GSS
V GSM
I D25
I DM
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
Maximum Ratings
1000
1000
± 30
± 40
22
50
V
V
V
V
A
A
G
D
S
PLUS247 (IXTX)
Tab
I A
E AS
T C = 25 ° C
T C = 25 ° C
22
1.5
A
J
G
D
S
Tab
P D
T J
T JM
T stg
T C = 25 ° C
700
-55 ... +150
150
-55 ... +150
W
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T L
T SOLD
M d
F C
Weight
1.6mm (0.063 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
300
260
1.13/10
20..120 / 4.5..27
10
6
° C
° C
Nm/lb.in.
N/lb.
g
g
Features
? Designed for Linear Operation
? Avalanche Rated
? Molding Epoxy Meets UL94 V-0
Flammability Classification
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
? Easy to Mount
? Space Savings
? High Power Density
BV DSS
V GS = 0V, I D = 1mA
1000
V
Applications
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 250 μ A
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 20V, I D = 0.5 ? I DSS , Note 1
3.0
5.5 V
± 200 nA
50 μ A
1 mA
600 m Ω
?
?
?
?
?
?
Programmable Loads
Current Regulators
DC-DC Converters
Battery Chargers
DC Choppers
Temperature and Lighting Controls
? 2010 IXYS CORPORATION, All Rights Reserved
DS99293D(10/10)
相关PDF资料
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相关代理商/技术参数
IXTK250N10 功能描述:MOSFET 250 Amps 100V 0.005 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK32P60P 功能描述:MOSFET -32 Amps -600V 0.350 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK33N45 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 33A I(D) | TO-264AA
IXTK33N50 功能描述:MOSFET 33 Amps 500V 0.17 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK40P50P 功能描述:MOSFET -40.0 Amps -500V 0.230 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK46N50L 功能描述:MOSFET 44 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK550N055T2 功能描述:功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXTK5N250 制造商:IXYS Corporation 功能描述:MOSFET N-CH 2500V 5A TO264